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| Excelics PRELIMINARY DATA SHEET * * * * * * +37.0dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 12,000 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 200mA PER BIN RANGE ' ' EFA1200A Low Distortion GaAs Power FET ' ' ' 6 * 6 * 6 * 6 * 6 * 6 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f= 2GHz f= 4GHz f= 2GHz f= 4GHz Chip Thickness: 50 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns MIN 35.5 14.5 2000 1400 TYP 37.0 37.0 16.0 11.0 3400 1800 -2.0 MAX UNIT dBm dB Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=30mA 4400 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=12mA Source Breakdown Voltage Igs=12mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 4 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 2.0A Ids Forward Gate Current 300mA 50mA Igsf Input Power 36dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 34 W 28 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA1200A PRELIMINARY DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.971 -156.3 0.970 -168.7 0.970 -173.2 0.970 -175.7 0.970 -177.4 0.970 -178.7 0.970 -179.8 0.970 179.3 0.971 178.5 0.971 177.8 0.971 177.1 0.972 176.4 0.972 175.8 0.972 175.1 0.973 174.5 0.973 174.0 0.974 173.4 0.974 172.8 0.975 172.2 0.975 171.7 8V, 1/2 Idss --- S21 --MAG ANG 5.096 98.0 2.590 88.2 1.732 82.3 1.300 77.4 1.040 73.0 0.867 68.8 0.743 64.8 0.650 60.9 0.577 57.2 0.519 53.5 0.471 50.0 0.430 46.5 0.396 43.2 0.367 39.9 0.341 36.8 0.318 33.8 0.297 30.9 0.279 28.1 0.262 25.4 0.247 22.8 --- S12 --MAG ANG 0.012 17.9 0.013 17.8 0.013 21.4 0.013 25.7 0.014 30.1 0.015 34.3 0.015 38.2 0.016 41.8 0.017 45.1 0.018 48.0 0.019 50.7 0.020 53.1 0.021 55.3 0.023 57.2 0.024 59.0 0.025 60.5 0.027 61.9 0.028 63.1 0.029 64.2 0.031 65.1 --- S22 --MAG ANG 0.794 -177.7 0.799 -178.7 0.801 -178.9 0.803 -179.0 0.805 -179.1 0.807 -179.1 0.810 -179.1 0.813 -179.1 0.816 -179.1 0.820 -179.2 0.823 -179.2 0.827 -179.3 0.831 -179.4 0.835 -179.5 0.840 -179.6 0.844 -179.8 0.849 -180.0 0.853 179.8 0.858 179.6 0.863 179.4 The data included 0.7 mils diameter Au bonding wires: 5 gate wires, 20 mils each; 5 drain wires, 12 mils each; 12 source wires, 7 mils each. |
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